Array substrate, manufacturing method thereof, control method, control assembly, and display device

ABSTRACT

An array substrate includes a base substrate, a thin film transistor and at least one photosensitive structure formed on the base substrate, the at least one photosensitive structure electrically connected to a drain electrode of the thin film transistor and configured to sense light intensity outside, and a common electrode formed on the base substrate on which the thin film transistor and the at least one photosensitive structure are formed. A method for manufacturing the array substrate, a control assembly and a display device are further disclosed.

TECHNICAL FIELD

Embodiments of the present disclosure relate an array substrate, amanufacturing method thereof, a control method, a control assembly and adisplay device.

BACKGROUND

In recent years, with rapid development of mobile electronic devicessuch as cell phone, people demands more and more on various functions ofdisplay device, for example, auto-brightness adjustment of displaydevice, which is considered as a commonly used one.

Relevant arts disclosed a display device (such as a cell phone), on ahousing of which a photosensitive unit is mounted. The photosensitiveunit senses light intensity outside, and feed the light intensity backto a control component, which control light intensity of backlightsource according to the light intensity, so as to adjust displaybrightness of the display device.

In the manner of controlling light intensity of backlight source asdescribed above, the display device can sense light intensity outsidethrough a photosensitive unit mounted outside and adjust displaybrightness according to the light intensity outside, so as to obtainauto-brightness adjustment. However, the cost is high.

SUMMARY

An embodiment of the present disclosure provides an array substrate,comprising: a base substrate; a thin film transistor formed on the basesubstrate; and a photosensitive structure, which is connected with adrain electrode of the thin film transistor and configured to senselight intensity outside; wherein the array substrate further comprises acommon electrode, which is formed on the base substrate.

In one embodiment of the present disclosure, the photosensitivestructure comprises a photosensitive layer and a photosensitiveelectrode, wherein the photosensitive electrode is formed on the basesubstrate on which the thin film transistor is formed, thephotosensitive electrode is connected with a drain electrode of the thinfilm transistor; the photosensitive layer is formed on thephotosensitive electrode; and the common electrode is formed on thephotosensitive layer.

At least one embodiment of the present disclosure provides amanufacturing method of an array substrate, which comprises:

forming a thin film transistor and a photosensitive structure on a basesubstrate, wherein the photosensitive structure is connected with adrain electrode of the thin film transistor; and

forming a pattern of common electrode on the base substrate on which thethin film transistor and the photosensitive structure are formed.

At least one embodiments of the present disclosure provides a controlmethod for an array substrate, the array substrate comprising a basesubstrate, a thin film transistor, a photosensitive structure and acommon electrode formed on the base substrate, wherein thephotosensitive structure is connected with a drain electrode of thetransistor, the method comprising:

stopping inputting a signal to a source electrode of the thin filmtransistor;

sensing light intensity outside and generating a photocurrent;

receiving the photocurrent flowing through a drain electrode and asource electrode of the thin film transistor; and

controlling display brightness on basis of the photocurrent.

At least one embodiment of the present disclosure provides a controlassembly configured to control an array substrate, the array substratecomprising a thin film transistor, a photosensitive structure and acommon electrode, the control assembly comprising:

a stop module, configured to stop inputting a signal to a sourceelectrode of the thin film transistor, the photosensitive structureconfigured to sense light intensity outside and generate a photocurrent;

a receiving module, configured to receiving the photocurrent flowingthrough a drain electrode and a source electrode of the thin filmtransistor; and

a control module, configured to adjust display brightness on basis ofthe photocurrent.

At least one embodiment of the present disclosure provides a displaydevice, which comprises the array substrate as described above.

At least one embodiment of the present disclosure provides a displaydevice, which comprises the control assembly as described above.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to clearly illustrate the technical solutions of theembodiments of the disclosure, the drawings of the embodiments will bebriefly described in the following; it is obvious that the drawingsdescribed below are only related to some embodiments of the disclosureand thus are not limitative of the disclosure.

FIG. 1 is an illustrative structural view of an array substrateaccording to one embodiment of the present disclosure;

FIG. 2-1 is an illustrative structural view of an array substrateaccording to another embodiment of the present disclosure;

FIG. 2-2 is an illustrative structural view of the array substrate asillustrated in FIG. 2-1, wherein a photosensitive structure is notformed on the array substrate;

FIG. 2-3 is a top view of the array substrate as illustrated in FIG.2-1;

FIG. 2-4 is a equivalent schematic circuit diagram of the arraysubstrate as illustrated in FIG. 2-1;

FIG. 2-5 is an illustrative structural view of an array substrateaccording to another embodiment of the present disclosure;

FIG. 3-1 is a flow chart of a manufacturing method of an array substrateaccording to one embodiment of the present disclosure;

FIG. 3-2 is an illustrative structural view of a base substratemanufactured by the manufacturing method according to the embodiment asillustrated in FIG. 3-1;

FIG. 4-1 is a flow chart of a manufacturing method of an array substrateaccording to one embodiment of the present disclosure;

FIG. 4-2 to FIG. 4-7 are illustrative structural views of a basesubstrate manufactured by the manufacturing method according to theembodiment as illustrated in FIG. 4-1;

FIG. 5-1 is a flow chart of a control method for an array substrateaccording to one embodiment of the present disclosure;

FIG. 5-2 is a flow chart of controlling display brightness in thecontrol method for the array substrate according to the embodiment asillustrated in FIG. 5-1; and

FIG. 6 is a block diagram of a control assembly according to oneembodiment of the present disclosure.

Reference Signs: 101 base substrate 120 thin film transistor 121 drainelectrode of thin film 130 photosensitive transistor structure 131photosensitive layer 132 photosensitive electrode 140 common electrode150 light emitting structure 160 pixel electrode 170 insulating layerG-gate electrode S-source electrode D-drain electrode

DETAILED DESCRIPTION

In order to make objects, technical details and advantages of theembodiments of the disclosure apparent, the technical solutions of theembodiment will be described in a clearly and fully understandable wayin connection with the drawings related to the embodiments of thedisclosure. It is obvious that the described embodiments are just a partbut not all of the embodiments of the disclosure. Based on the describedembodiments herein, those skilled in the art can obtain otherembodiment(s), without any inventive work, which should be within thescope of the disclosure.

FIG. 1 is an illustrative structural view of an array substrateaccording to one embodiment of the present disclosure. The arraysubstrate comprising: a base substrate 110; a thin film transistor 120formed on the base substrate 110; and at least one photosensitivestructure 130, formed on the base substrate 110; wherein the at leastone photosensitive structure 130 is electrically connected with a drainelectrode 121 of the thin film transistor 120 and is configured to senselight intensity outside.

The array substrate further comprises a common electrode 140, formed onthe substrate 110 on which the thin film transistor 120 and the at leastone photosensitive structure 130 are formed.

In the array substrate according to the embodiment of the presentdisclosure, light intensity outside is sensed by the photosensitivestructure formed on the array substrate. Thus, light intensity outsideis not required to be sensed by a light sensing unit mounted outside, asdoes conventional techniques, and cost for obtaining auto-brightnessadjustment of display is reduced.

And further, please refer to FIG. 2-1, which illustrate an illustrativestructure view of an array substrate according to another embodiment ofthe present disclosure. The array substrate is a variant of the arraysubstrate as illustrated in FIG. 1, wherein a photosensitive structurecomprises a photosensitive layer 131 and a photosensitive electrode 132,which forms together the photosensitive structure 130 as illustrated inFIG. 1.

As illustrate in FIG. 2-1, a photosensitive electrode 132 is formed onthe base substrate 110 on which the thin film transistor 120 is formed,and the photosensitive electrode 132 is electrically connected with adrain electrode 121 of the thin film transistor 120.

The photosensitive layer 131 is formed on the photosensitive electrode132, and the common electrode 140 is formed on the photosensitive layer131. The photosensitive layer 131 may be formed in a region over thethin film transistor 120, and the photosensitive layer 131 may not beformed in a region over the thin film transistor 120, which is notlimited herein. If the photosensitive layer 131 is formed in a regionover the thin film transistor 120, an insulating layer is formed betweenthe thin film transistor 120 and the photosensitive layer 131 so as toprotect the thin film transistor 120.

In one embodiment of the present disclosure, the photosensitive layer131 is formed of a material comprising at least one of photosensitiveresin and photosensitive polymer.

In one embodiment of the present disclosure, a light emitting structure150 is formed on the common electrode 140.

A pixel electrode 160 can be formed on the light emitting structure 150.The pixel electrode 160 is electrically connected with a drain electrode121 of the thin film transistor 120. The light emitting structure 150may be formed in a region over the thin film transistor 120, and may notbe formed in a region over the thin film transistor 120, which is notlimited in the present disclosure.

In one embodiment of the present disclosure, the pixel electrode 160 canbe electrically connected with the photosensitive electrode 132 via athrough hole. As the photosensitive electrode 132 is electricallyconnected with the drain electrode 121, the pixel electrode 160 can beelectrically connected with the drain electrode 121. And if the pixelelectrode 160 is electrically connected with the photosensitiveelectrode, the pixel electrode 160 is not in contact with thephotosensitive layer 131.

In one embodiment of the present disclosure, the light emittingstructure 150 is a three-layered electroluminescence structure or afive-layered electroluminescence structure.

If the light emitting structure 150 is a three-layeredelectroluminescence structure, it comprises a cathode, anelectroluminescence layer and an anode.

If the light emitting structure 150 is a five-layeredelectroluminescence structure, it comprises a cathode, anelectroluminescence layer, an ion conductor layer, an ion storage layerand an anode.

In the array substrate according to one embodiment of the presentdisclosure, the photosensitive structure can be disposed in a portion ofa pixel region. For example, pixels in any one to four columns areprovided with a photosensitive structure, while other pixels are notprovided with photosensitive structure. Structure of a portion of thearray substrate which is not provided photosensitive structure isillustrated in FIG. 2-2, wherein the pixel electrode 160 is directlyelectrically connected with the drain electrode 121 and the commonelectrode 140 is formed on the insulating layer 170. A top view of thearray substrate according to this embodiment of the present disclosureis illustrated in FIG. 2-3, wherein the photosensitive layer, the lightemitting structure and the pixel electrode are not shown, a commonsignal line 210 is connected with the common electrode 140 so as tosupply electrical signals to the common electrode 140, and the data line220 is electrically connected with the drain electrode of the thin filmtransistor 120.

FIG. 2-4 illustrates a equivalent schematic circuit diagram of the arraysubstrate according to one embodiment of the present disclosure, whereinG is a gate electrode, S is a source electrode and D is a drainelectrode, Cst refers to the capacitance between the pixel electrode andthe common electrode, Cs refers to the capacitance between thephotosensitive electrode and the common electrode, and the Cst isconnected with the Cs in parallel. The Cst is included in conventionalarts, while the array substrate further comprises a Cs with respect tothe conventional arts, which enlarge the storage capacitance, thusfacilitating holding voltage of the pixel, and mitigating defects inimage quality due to leakage current (a current flowing through the thinfilm transistor when the thin film transistor is OFF).

FIG. 2-5 illustrates structure of an array substrate according to oneembodiment of the present disclosure, wherein shapes of a light emittingstructure 150 and the photosensitive layer 131 are formed through apatterning process so as to make the pixel electrode 160 electricallyconnected with the photosensitive electrode 132. The pixel electrode 160and the photosensitive layer 131 are not formed over the thin filmtransistor 120, and a portion of the photosensitive electrode 132 is notoverlapped by the pixel electrode 160 and the photosensitive layer 131.Then, the pixel electrode 160 formed on the light emitting structure 150can be directly electrically connected with the photosensitive electrode132 or the drain electrode 121.

It should be noted that, in the array substrate according to embodimentsof the present disclosure, a light emitting structure formed on the basesubstrate can obtain an effect that the array substrate can emit lightitself.

According to one embodiment of the present disclosure, operation stateof the array substrate comprising a photosensitive structure comprises aphoto sensing stage and a display stage. Light intensity outside issensed before displaying image, so as to adjust display brightnessaccording to light intensity outside. The photo sensing stage has a veryshort duration, for example, several milliseconds, so as to not affectnormal display. In order to sense light intensity outside, inputtingsignals to the source electrode of the thin film transistor is stopped.Thereafter, the photosensitive structure generates photocurrent undereffect of the light from outside. Amplitude of the generatedphotocurrent is proportional to light intensity outside. Thephotocurrent can flow reversely (that is, flowing in a directionopposite to the direction of driving current), from the drain electrodeto the source electrode. The light intensity outside can be determinedon basis of the amplitude of the photocurrent, and the displaybrightness can be controlled on basis of the light intensity outside,such as controlling brightness of the backlight source.

As described above, in the array substrate according to embodiments ofthe present disclosure, a photosensitive structure is formed on thearray substrate so as to sense light intensity outside. With respectiveconventional techniques, it is not required to mount a photosensitiveunit outside to sense light intensity outside, thus reducing cost ofobtaining auto adjustment for display brightness.

FIG. 3-1 is a flow chart of a manufacturing method of an array substrateaccording to one embodiment of the present disclosure, the manufacturingmethod comprising:

forming a thin film transistor and at least one photosensitive structureon a base substrate, the at least one photosensitive structureelectrically connected with a drain electrode of the thin filmtransistor; and

forming a pattern comprising a common electrode 140 on the basesubstrate on which the thin film transistor and the at least onephotosensitive structure are formed.

After forming a thin film transistor and at least one photosensitivestructure on a base substrate, a structure of the base substrate isillustrated in FIG. 3-2, wherein the thin film transistor 120 and thephotosensitive structure 130 are formed on the base substrate 110, andthe photosensitive structure 130 is electrically connected with thedrain electrode 121 of the thin film transistor 120.

After forming the pattern comprising the common electrode 140 on thebase substrate on which the thin film transistor and the at least onephotosensitive structure are formed, the structure of the arraysubstrate as illustrated in FIG. 1 is obtained.

As described above, in the manufacturing method of array substrateaccording to the embodiment of the present disclosure, a photosensitivestructure is formed on the array substrate and is configured to senselight intensity outside. Thus, light intensity outside is not requiredto be sensed by a light sensing unit mounted outside, as conventionaltechniques do, and cost for obtaining auto-brightness adjustment ofdisplay is reduced.

FIG. 4-1 is a flow chart of a manufacturing method of an array substrateaccording to another embodiment of the present disclosure, the methodcomprising:

forming a thin film transistor on a base substrate;

forming a pattern comprising a photosensitive electrode on the basesubstrate on which the thin film transistor is formed, wherein thephotosensitive electrode is electrically connected with a drainelectrode of the thin film transistor;

forming a photosensitive layer on the photosensitive electrode, whereinthe photosensitive electrode and the photosensitive layer form aphotosensitive structure;

forming a pattern comprising a common electrode on the base substrate onwhich the thin film transistor and the photosensitive structure areformed;

forming a light emitting structure on the common electrode; and

forming a patterning comprising a pixel electrode, wherein the pixelelectrode is electrically connected with a drain electrode of the thinfilm transistor.

After forming the thin film transistor on the base substrate, thestructure of the base substrate is illustrated in FIG. 4-2, wherein thethin film transistor 120 and the insulating layer 170 are formed on thebase substrate.

After forming the pattern comprising a photosensitive electrode on thebase substrate on which the thin film transistor is formed, theresultant structure of the base substrate is illustrated in FIG. 4-3,wherein the photosensitive electrode 132 is electrically connected withthe drain electrode 121 of the thin film transistor 120.

In one embodiment of the present disclosure, material for thephotosensitive layer comprises at least one of photosensitive resin andphotosensitive polymer.

After forming a photosensitive layer on the photosensitive electrode,the resultant structure of the base substrate is illustrated in FIG.4-4, wherein the photosensitive layer 131 is formed on thephotosensitive electrode. In the structure as illustrated in FIG. 4-4,if the photosensitive layer 131 is formed on the thin film transistor120, an insulating layer (not shown in the FIG. 4-4) can be formedbetween the thin film transistor and the photosensitive layer 131 so asto protect the thin film transistor 120. Optionally, the photosensitivelayer 131 is not formed on the thin film transistor 120. It should benoted that, the pixel electrode can be electrically connected with thephotosensitive electrode 132 via a through hole. Then, after forming aphotosensitive layer on the photosensitive electrode, a first throughhole k1 is formed in the photosensitive layer 131, and the resultantstructure of the array substrate is illustrated in FIG. 4-5, wherein thesame reference signs refer to the similar structure as illustrated inFIG. 4-4.

In one embodiment of the present disclosure, the common electrode isformed on the photosensitive layer.

Optionally, the light emitting structure can be a three-layeredelectroluminescence structure or a five-layered electroluminescencestructure.

If the light emitting structure is a three-layered electroluminescencestructure, it comprises a cathode, an electroluminescence layer, and ananode. And if the light emitting structure is a five-layeredelectroluminescence structure, it comprises a cathode, aelectroluminescence layer, an ion conductor layer, an ion storage layerand an anode.

After forming a light emitting structure on the common electrode, theresultant structure of the array substrate is as illustrated in FIG.4-6, wherein the light emitting structure 160 is formed on the commonelectrode 140.

Optionally, the pixel electrode is electrically connected with thephotosensitive electrode via a through hole. As illustrated in FIG. 4-7,after forming a light emitting structure on the common electrode, asecond through hole k2 is formed in the light emitting layer, the radiusof the second through hole k2 is less than the radius of the firstthrough hole k1.

After forming a patterning comprising a pixel electrode, the resultantstructure of the base substrate is as illustrated in FIG. 2-1. As theradius of the second through hole k2 is less than the radius of thefirst through hole k1, the pixel electrode 160 will not be in contactwith the photosensitive layer 131, thus mutual influence between thepixel electrode 160 and the photosensitive layer 131.

It should be noted that, in the manufacturing method of array substrateaccording to embodiments of the present disclosure, a light emittingstructure is formed on the base substrate, thus the array substrate canemit light itself.

As described above, in the manufacturing method of array substrateaccording to the embodiment of the present disclosure, a photosensitivestructure is formed on the array substrate and is configured to senselight intensity outside. Thus, light intensity outside is not requiredto be sensed by a light sensing unit mounted outside, as conventionaltechniques do, and cost for obtaining auto-brightness adjustment ofdisplay is reduced.

FIG. 5-1 is a flow chart of a control method for an array substrateaccording to one embodiment of the present disclosure, the method isadapted to a control assembly, which is configured to control the arraysubstrate according to the embodiment as illustrated in FIG. 1, or tocontrol the array substrate according to the embodiment as illustratedin FIG. 2, the array substrate comprising a thin film transistor, aphotosensitive structure, and a common electrode, wherein the methodcomprises:

the control assembly stopping inputting a signal to a source electrodeof the thin film transistor, the photosensitive structure configured tosense light intensity outside and generate photocurrent;

the control assembly receiving the photocurrent which pass through thedrain electrode and the source electrode of the thin film transistorunder effect of the common electrode; and

the control assembly controlling display brightness according toamplitude of the photocurrent.

After stopping inputting a signal to the source electrode of the thinfilm transistor, the photocurrent generated by the photosensitivestructure can flow reversely into the control assembly through thesource electrode. It should be noted that, period of stopping inputtingsignals to the source electrode of the thin film transistor can be takenas a photosensitive stage and other periods can be taken as a displaystage. The photosensitive stage can be very short (for example, severalmilliseconds), thus, normal display will not be affected.

In order to make the photocurrent generated by the photosensitive flowto the drain electrode more easily, the common electrode can be applieda preset negative voltage.

After receiving the photocurrent, the control assembly can sense lightintensity outside at present on basis of the photocurrent, and controldisplay brightness according to the light intensity outside, forexample, by controlling brightness of the backlight source.

Optionally, the array substrate further comprises a light emittingstructure and a pixel electrode.

In such a case, as illustrated in FIG. 5-2, the control assemblycontrolling the display brightness according to the photocurrent cancomprise:

the control assembly generating a control signal according to thephotocurrent; and

the control assembly inputting the control signal to the sourceelectrode of the thin film transistor, the control signal conducted bythe thin film transistor to the drain electrode and flowing to the pixelelectrode, and the light-emitting structure emitting light under effectof the pixel electrode and the common electrode.

If the array substrate comprises a light emitting structure, the controlassembly can directly generate a control signal for controlling thelight emitting structure, which can make the light emitting structureemit light with required brightness (for example, a brightness suitablefor human eyes).

It should be noted that, in the control method for an array substrateaccording to an embodiment of the present disclosure, the controlassembly just needs to output two timing signals (one for controllingthe photosensitive stage, and the other for controlling the displaystage). Thus, the control assembly can be provided with two ElectricallyErasable Programmable Read-Only Memories (EEPROM), which are configuredto output timing signals for controlling the photosensitive stage andthe display stage respectively.

It should be noted that, in the control method for an array substrateaccording to an embodiment of the present disclosure, the effect ofadjusting display brightness by controlling the array substrate isobtained through controlling light emitted from the light emittingstructure disposed on the array substrate.

As described above, in the manufacturing method of array substrateaccording to the embodiment of the present disclosure, a photosensitivestructure is formed on the array substrate and is configured to senselight intensity outside. Thus, light intensity outside is not requiredto be sensed by a light sensing unit mounted outside, as conventionaltechniques do, and cost for obtaining auto-brightness adjustment ofdisplay is reduced.

FIG. 6 illustrates a control assembly according to an embodiment of thepresent disclosure. The control assembly is configured to control thearray substrate according to the embodiment illustrated in FIG. 1 or thearray substrate according to the embodiment illustrated in FIG. 2-1. Thearray substrate can comprise a thin film transistor, a photosensitivestructure and a common electrode. The control assembly comprises:

a stopping module 610, configured to stop inputting a signal to a sourceelectrode of the thin film transistor, the photosensitive structureconfigured to sense light intensity outside and generate a photocurrent;

a receiving module 620, configured to receive the photocurrent flowingthrough a drain electrode and the source electrode of the thin filmtransistor under effect of the common electrode; and

a control module 630, configured to control display brightness on basisof the photocurrent.

Optionally, the control module 630 is configured to generate a controlsignal on basis of the photocurrent and input the control signal to thesource electrode of the thin film transistor, and then, the controlsignal is conducted to the drain electrode of the thin film transistorand flows into the pixel electrode, the light emitting structure emitslight under effect of a pixel electrode and the common electrode.

It should be noted that, the control assembly according to theembodiment of the present disclosure controls the light emittingstructure disposed on the array substrate to emit light, thus achievingan effect of adjusting display brightness by controlling the arraysubstrate.

As described above, in the control assembly according to the embodimentof the present disclosure, a photosensitive structure is formed on thearray substrate and is configured to sense light intensity outside.Thus, light intensity outside is not required to be sensed by a lightsensing unit mounted outside, as conventional techniques do, and costfor obtaining auto-brightness adjustment of display is reduced.

At least one embodiment of the present disclosure further provides adisplay device, which comprises the array substrate according to theembodiment illustrated in FIG. 1 or the array substrate according to theembodiment illustrated in FIG. 2-1.

At least one embodiment of the present disclosure further provides adisplay device, which comprises the control assembly as illustrated inFIG. 6.

The foregoing are merely exemplary embodiments of the disclosure, butare not used to limit the protection scope of the disclosure. Theprotection scope of the disclosure shall be defined by the attachedclaims.

The present disclosure claims priority of Chinese Patent Application No.201510315475.4 filed on Jun. 10, 2015, the disclosure of which is herebyentirely incorporated by reference.

What is claimed is:
 1. An array substrate, comprising: a base substrate;a thin film transistor formed on the base substrate; and at least onephotosensitive structure formed on the base substrate, wherein the atleast one photosensitive structure is electrically connected to a drainelectrode of the thin film transistor and is configured to sense lightintensity outside; and wherein the array substrate further comprises acommon electrode formed on the base substrate on which the thin filmtransistor and the at least one photosensitive structure are formed. 2.The array substrate according to claim 1, wherein the at least onephotosensitive structure comprises a photosensitive layer and aphotosensitive electrode; the photosensitive electrode is formed on thebase substrate and is electrically connected with the drain electrode ofthe thin film transistor; the photosensitive layer is formed on thephotosensitive electrode; and the common electrode is formed on thephotosensitive layer.
 3. The array substrate according to claim 2,further comprising a light emitting structure, wherein the lightemitting structure is formed on the common electrode; and the arraysubstrate further comprises a pixel electrode, which is formed on thelight emitting structure and is electrically connected with the drainelectrode of the thin film transistor.
 4. The array substrate accordingto claim 3, wherein the light emitting structure is a three-layeredelectroluminescence structure which comprises a cathode, anelectroluminescence layer and an anode; or the light emitting structureis a five-layered electroluminescence structure which comprises acathode, an electroluminescence layer, an ion conductor layer, an ionstorage layer and an anode.
 5. The array substrate according to claim 2,wherein material for the photosensitive layer comprises at least one ofphotosensitive resin and photosensitive polymer.
 6. A method formanufacturing an array substrate, comprising: forming a thin filmtransistor and at least one photosensitive structure on a basesubstrate, the at least one photosensitive structure being electricallyconnected with a drain electrode of the thin film transistor; andforming a common electrode on the base substrate on which the thin filmtransistor and the at least one photosensitive structure are formed. 7.The method according to claim 6, wherein the at least one photosensitivestructure comprises a photosensitive layer and a photosensitiveelectrode; forming the thin film transistor and the at least onephotosensitive structure on the base substrate comprises: forming thethin film transistor on the base substrate; forming the photosensitiveelectrode on the base substrate on which the thin film transistor isformed, the photosensitive electrode being electrically connected withthe drain electrode of the thin film transistor; and forming thephotosensitive layer on the photosensitive electrode, the photosensitivelayer being disposed below the common electrode.
 8. The method accordingto claim 7, wherein the array substrate further comprises a lightemitting structure; after forming the thin film transistor and the atleast one photosensitive structure on the base substrate, the methodfurther comprises: forming the common electrode on the light emittingstructure; and forming a pixel electrode on the light emittingstructure, the pixel electrode being electrically connected with thedrain electrode of the thin film transistor.
 9. The method according toclaim 8, wherein the light emitting structure is a three-layeredelectroluminescence structure which comprises a cathode, anelectroluminescence layer and an anode; or the light emitting structureis a five-layered electroluminescence structure which comprises acathode, an electroluminescence layer, an ion conductor layer, an ionstorage layer and an anode.
 10. The method according to claim 7, whereinmaterial for the photosensitive layer comprises at least one ofphotosensitive resin and photosensitive polymer.
 11. A control methodadapted to control the array substrate of claim 1, the control methodcomprising: stopping inputting a signal to a drain electrode of the thinfilm transistor, the photosensitive structure being configured to senselight intensity outside and to generate a photocurrent; receiving aphotocurrent flowing through the drain electrode and a source electrodeof the thin film transistor under effect of the common electrode; andcontrolling display brightness according to the photocurrent.
 12. Thecontrol method according to claim 11, wherein the array substratefurther comprises a light emitting structure and a pixel electrode;controlling the display brightness according to the photocurrentcomprises: generating a control signal according to the photocurrent;inputting a control signal to the source electrode of the thin filmtransistor, and inputting the control signal into the pixel electrodethrough the source electrode and the drain electrode of the thin filmtransistor; and allowing the light emitting structure to emit lightunder effect of the pixel electrode and the common electrode.
 13. Acontrol method adapted to a control assembly, the control assemblyconfigured to control the array substrate of claim 1, the control methodcomprising: the control assembly stopping inputting a signal to a sourceof the thin film transistor, the photosensitive structure configured tosense light intensity outside and generate a photocurrent; the controlassembly receiving the photocurrent flowing through a drain electrodeand a source electrode of the thin film transistor under effect of thecommon electrode; and the control assembly adjusting display brightnessaccording to the photocurrent.
 14. The control method according to claim13, wherein the array substrate further comprises a light emittingstructure and a pixel electrode, and the control assembly controllingthe display brightness according to the photocurrent comprises: thecontrol assembly generating a control signal according to thephotocurrent; and the control assembly inputting the control signal to asource electrode of the thin film transistor, the control signalconducted to a drain electrode of the thin film transistor by the sourceelectrode of the thin film transistor and flowing into the pixelelectrode, the light emitting structure emitting light under effect ofthe pixel electrode and the common electrode.
 15. A control assemblyconfigured to control the array substrate of claim 1, the controlassembly comprising: a stopping module, configured to stop inputting asignal to a source electrode of the thin film transistor, thephotosensitive structure configured to sense light intensity outside andgenerate a photocurrent; a receiving module, configured to receiving thephotocurrent passing through the source electrode and a drain electrodeof the thin film transistor under effect of the common electrode; and acontrol module configured to control display brightness according to thephotocurrent.
 16. The control assembly according to claim 15, whereinthe control module is configured to generate a control signal accordingto the photocurrent and input the control signal to the source electrodeof the thin film transistor, the source electrode of the thin filmtransistor conducts the control signal to the drain electrode of thethin film transistor and makes the control signal flow into the pixelelectrode, and the light emitting structure emits light under effect ofthe pixel electrode and the common electrode.
 17. A control assemblyconfigured to control the array substrate of claim 2, wherein thecontrol assembly comprises: a stop module, configured to stop inputtinga signal to a source electrode of the thin film transistor, thephotosensitive structure configured to sense light intensity outside andgenerate a photocurrent; a receiving module, configured to receiving thephotocurrent passing through the source electrode and a drain electrodeof the thin film transistor under effect of the common electrode; and acontrol module configured to control display brightness according to thephotocurrent.
 18. The control assembly according to claim 17, whereinthe control module is configured to generate a control signal accordingto the photocurrent and input the control signal to the source electrodeof the thin film transistor, the source electrode of the thin filmtransistor conducts the control signal to the drain electrode of thethin film transistor and makes the control signal flow into the pixelelectrode, and the light emitting structure emits light under effect ofthe pixel electrode and the common electrode.
 19. A display devicecomprising the array substrate according to claim
 1. 20. A displaydevice comprising the control assembly according to claim 15.